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  transistors with built-in resistor 1 publication date: january 2004 sjh00039bed unr921xj series (un921xj series) silicon npn epitaxial planar type for digital circuits features ? costs can be reduced through downsizing of the equipment and reduction of the number of parts. ? ss-mini type package, allowing automatic insertion through tape packing. resistance by part number marking symbol (r 1 )(r 2 ) ? unr9210j (un9210j) 8l 47 k ?? ? unr9211j (un9211j) 8a 10 k ? 10 k ? ? unr9212j (un9212j) 8b 22 k ? 22 k ? ? unr9213j (un9213j) 8c 47 k ? 47 k ? ? unr9214j (UN9214J) 8d 10 k ? 47 k ? ? unr9215j (un9215j) 8e 10 k ?? ? unr9216j (un9216j) 8f 4.7 k ?? ? unr9217j (un9217j) 8h 22 k ?? ? unr9218j (un9218j) 8i 0.51 k ? 5.1 k ? ? unr9219j (un9219j) 8k 1 k ? 10 k ? ? unr921aj 8x 100 k ? 100 k ? ? unr921bj 8y 100 k ?? ? unr921cj 8z ? 47 k ? ? unr921dj (un921dj) 8m 47 k ? 10 k ? ? unr921ej (un921ej) 8n 47 k ? 22 k ? ? unr921fj (un921fj) 8o 4.7 k ? 10 k ? ? unr921kj (un921kj) 8p 10 k ? 4.7 k ? ? unr921lj (un921lj) 8q 4.7 k ? 4.7 k ? ? unr921mj el 2.2 k ? 47 k ? ? unr921nj ex 4.7 k ? 47 k ? ? unr921tj (un921tj) ez 22 k ? 47 k ? ? unr921vj fd 2.2 k ? 2.2 k ? absolute maximum ratings t a = 25 c note) the part numbers in the parenthesis show conventional part number. 0.27 0.02 3 12 0.12 +0.03 ?0.01 0.80 0.05 (0.80) 0.85 1.60 0.05 0 to 0.02 0.10 max. 0.70 +0.05 ?0.03 (0.375) 5? 5? 1.60 +0.05 ?0.03 1.00 0.05 (0.50)(0.50) +0.05 ?0.03 b c e r 1 r 2 internal connection unit: mm 1: base 2: emitter 3: collector eiaj: sc-89 ssmini3-f1 package parameter symbol rating unit collector-base voltage (emitter open) v cbo 50 v collector-emitter voltage (base open) v ceo 50 v collector current i c 100 ma total power dissipation p t 125 mw junction temperature t j 125 c storage temperature t stg ? 55 to + 125 c
2 unr921xj series transistors with built-in resistor sjh00039bed electrical characteristics t a = 25 c 3 c parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = 10 a, i e = 050 v collector-emitter voltage (base open) v ceo i c = 2 ma, i b = 050v collector-base cut-off current (emitter open) i cbo v cb = 50 v, i e = 0 0.1 a collector-emitter cut-off current (base open) i ceo v ce = 50 v, i b = 0 0.5 a emitter- unr9210j/9215j/ i ebo v eb = 6 v, i c = 0 0.01 ma base 9216j/9217j/921bj cut-off unr9213j/921aj 0.1 current unr9212j/9214j/921dj/ 0.2 (collector 921ej/921mj/921nj/921tj open) unr9211j 0.5 unr921fj/921kj 1.0 unr9219j 1.5 unr9218j/921cj/921lj/921vj 2.0 forward unr921vj h fe v ce = 10 v, i c = 5 ma 6 20 ? current unr9218j/921kj/921lj 20 transfer unr9219j/921dj/921fj 30 ratio unr9211j 35 unr9212j/921ej 60 unr9213j/9214j/921aj/ 80 921cj/921mj unr921nj/921tj 80 400 unr9210j/9215j/9216j/ 160 460 9217j/921bj collector-emitter saturation voltage v ce(sat) i c = 10 ma, i b = 0.3 ma 0.25 v output voltage high-level v oh v cc = 5 v, v b = 0.5 v, r l = 1 k ? 4.9 v output voltage low-level v ol v cc = 5 v, v b = 2.5 v, r l = 1 k ? 0.2 v unr9213j/921bj/921kj v cc = 5 v, v b = 3.5 v, r l = 1 k ? unr921dj v cc = 5 v, v b = 10 v, r l = 1 k ? unr921ej v cc = 5 v, v b = 6 v, r l = 1 k ? unr921aj v cc = 5 v, v b = 5 v, r l = 1 k ? transition frequency f t v cb = 10 v, i e = ? 2 ma, f = 200 mhz 150 mhz input unr9218j r 1 ? 30% 0.51 + 30% k ? resistance unr9219j 1 unr921mj/921vj 2.2 unr9216j/921fj/921lj/921nj 4.7 unr9211j/9214j/9215j/921kj 10 unr9212j/9217j/921tj 22 unr9210j/9213j/921dj/921ej 47 unr921aj/921bj 100
3 transistors with built-in resistor unr921xj series sjh00039bed electrical characteristics (continued) t a = 25 c 3 c characteristics charts of unr9210j i c ? v ce v ce(sat) ? i c h fe ? i c common characteristics chart p t ? t a 0 0 160 40 120 80 150 125 100 75 50 25 ambient temperature t a ( c ) total power dissipation p t ( mw ) 012 210 48 6 0 60 50 40 30 20 10 collector-emitter voltage v ce ( v ) collector current i c ( ma ) t a = 25 c i b = 1.0 ma 0.1 ma 0.3 ma 0.4 ma 0.5 ma 0.6 ma 0.7 ma 0.8 ma 0.9 ma 10 ? 2 10 ? 1 10 ? 1 1 10 10 2 11010 2 i c / i b = 10 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 0 1 100 200 300 400 10 10 2 10 3 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( ma ) note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. parameter symbol conditions min typ max unit emitter-base resistance unr921cj r 2 ? 30% 47 + 30% k ? rasistance unr921mj r 1 /r 2 0.047 ? ratio unr921nj 0.1 unr9218j/9219j 0.08 0.10 0.12 unr9214j 0.17 0.21 0.25 unr921tj 0.47 unr921fj 0.37 0.47 0.57 unr921aj/921vj 1.0 unr9211j/9212j/9213j/921lj 0.8 1.0 1.2 unr921kj 1.70 2.13 2.60 unr921ej 1.70 2.14 2.60 unr921dj 3.7 4.7 5.7
4 unr921xj series transistors with built-in resistor sjh00039bed characteristics charts of unr9211j i c ? v ce v ce(sat) ? i c h fe ? i c c ob ? v cb i o ? v in v in ? i o c ob ? v cb i o ? v in v in ? i o 0 10 ? 1 6 5 4 3 2 1 11010 2 collector output capacitance (common base, input open circuited) c ob ( pf ) collector-base voltage v cb ( v ) f = 1 mhz i e = 0 t a = 25 c 1 0.4 10 10 2 10 3 10 4 1.4 1.2 1.0 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o = 5 v t a = 25 c 10 ? 2 10 ? 1 10 ? 1 1 10 10 2 11010 2 input voltage v in ( v ) output current i o ( ma ) v o = 0.2 v t a = 25 c 0 012 210 48 6 40 120 80 160 collector-emitter voltage v ce ( v ) collector current i c ( ma ) t a = 25 c i b = 1.0 ma 0.1 ma 0.2 ma 0.3 ma 0.4 ma 0.5 ma 0.6 ma 0.7 ma 0.8 ma 0.9 ma 10 ? 2 10 ? 1 10 ? 1 1 10 10 2 11010 2 collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) i c / i b = 10 t a = 75 c 25 c ? 25?c 0 1 100 200 300 400 10 10 2 10 3 forward current transfer ratio h fe collector current i c ( ma ) v ce = 10 v t a = 75 c 25 c ? 25 c 0 10 ? 1 6 5 4 3 2 1 11010 2 collector output capacitance (common base, input open circuited) c ob ( pf ) collector-base voltage v cb ( v ) f = 1 mhz i e = 0 t a = 25 c 1 0.4 10 10 2 10 3 10 4 1.4 1.2 1.0 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o = 5 v t a = 25 c 10 ? 2 10 ? 1 10 ? 1 1 10 10 2 11010 2 input voltage v in ( v ) output current i o ( ma ) v o = 0.2 v t a = 25 c
5 transistors with built-in resistor unr921xj series sjh00039bed characteristics charts of unr9212j i c ? v ce v ce(sat) ? i c h fe ? i c characteristics charts of unr9213j i c ? v ce v ce(sat) ? i c h fe ? i c c ob ? v cb i o ? v in v in ? i o 0 012 210 48 6 40 120 80 160 collector-emitter voltage v ce ( v ) collector current i c ( ma ) t a = 25 c i b = 1.0 ma 0.1 ma 0.2 ma 0.3 ma 0.4 ma 0.5 ma 0.6 ma 0.7 ma 0.9 ma 0.8 ma 10 ? 2 10 ? 1 10 ? 1 1 10 10 2 11010 2 collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) i c / i b = 10 t a = 75 c 25 c ? 25 c 0 1 100 200 300 400 10 10 2 10 3 forward current transfer ratio h fe collector current i c ( ma ) v ce = 10 v t a = 75 c 25 c ? 25 c 0 10 ? 1 6 5 4 3 2 1 11010 2 collector output capacitance (common base, input open circuited) c ob ( pf ) collector-base voltage v cb ( v ) f = 1 mhz i e = 0 t a = 25 c 1 0.4 10 10 2 10 3 10 4 1.4 1.2 1.0 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o = 5 v t a = 25 c 10 ? 2 10 ? 1 10 ? 1 1 10 10 2 110 10 2 input voltage v in ( v ) output current i o ( ma ) v o = 0.2 v t a = 25 c 0 012 210 48 6 40 120 80 160 collector-emitter voltage v ce ( v ) collector current i c ( ma ) t a = 25 c i b = 1.0 ma 0.1 ma 0.2 ma 0.3 ma 0.4 ma 0.5 ma 0.6 ma 0.7 ma 0.8 ma 0.9 ma 10 ? 2 10 ? 1 10 ? 1 1 10 10 2 11010 2 collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) i c / i b = 10 t a = 75 c 25 c ? 25 c 0 1 100 200 300 400 10 10 2 10 3 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( ma )
6 unr921xj series transistors with built-in resistor sjh00039bed c ob ? v cb i o ? v in v in ? i o c ob ? v cb i o ? v in v in ? i o characteristics charts of unr9214j i c ? v ce v ce(sat) ? i c h fe ? i c 0 10 ? 1 6 5 4 3 2 1 11010 2 f = 1 mhz i e = 0 t a = 25 c collector output capacitance (common base, input open circuited) c ob ( pf ) collector-base voltage v cb ( v ) 1 0.4 10 10 2 10 3 10 4 1.4 1.2 1.0 0.8 0.6 v o = 5 v t a = 25 c output current i o ( a ) input voltage v in ( v ) 10 ? 2 10 ? 1 10 ? 1 1 10 10 2 11010 2 v o = 0.2 v t a = 25 c input voltage v in ( v ) output current i o ( ma ) 0 012 210 48 6 40 120 80 160 t a = 25 c i b = 1.0 ma 0.1 ma 0.2 ma 0.3 ma 0.4 ma 0.5 ma 0.6 ma 0.7 ma 0.8 ma 0.9 ma collector-emitter voltage v ce ( v ) collector current i c ( ma ) 10 ? 1 10 ? 1 10 ? 2 1 10 10 2 11010 2 i c / i b = 10 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 0 1 100 200 300 400 10 10 2 10 3 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( ma ) 0 10 ? 1 6 5 4 3 2 1 11010 2 f = 1 mhz i e = 0 t a = 25 c collector output capacitance (common base, input open circuited) c ob ( pf ) collector-base voltage v cb ( v ) 1 0.4 10 10 2 10 3 10 4 1.4 1.2 1.0 0.8 0.6 v o = 5 v t a = 25 c output current i o ( a ) input voltage v in ( v ) 10 ? 2 10 ? 1 10 ? 1 1 10 10 2 11010 2 v o = 0.2 v t a = 25 c input voltage v in ( v ) output current i o ( ma )
7 transistors with built-in resistor unr921xj series sjh00039bed characteristics charts of unr9215j i c ? v ce v ce(sat) ? i c h fe ? i c characteristics charts of unr9216j i c ? v ce v ce(sat) ? i c h fe ? i c c ob ? v cb i o ? v in v in ? i o 0 012 210 48 6 40 120 80 160 t a = 25 c 0.1 ma 0.2 ma 0.3 ma 0.4 ma 0.5 ma 0.6 ma 0.7 ma i b = 1.0 ma 0.8 ma 0.9 ma collector-emitter voltage v ce ( v ) collector current i c ( ma ) 10 ? 2 10 ? 1 10 ? 1 1 10 10 2 11010 2 i c / i b = 10 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 0 1 100 200 300 400 10 10 2 10 3 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( ma ) 0 10 ? 1 6 5 4 3 2 1 11010 2 f = 1 mhz i e = 0 t a = 25 c collector output capacitance (common base, input open circuited) c ob ( pf ) collector-base voltage v cb ( v ) 1 0.4 10 10 2 10 3 10 4 1.4 1.2 1.0 0.8 0.6 v o = 5 v t a = 25 c output current i o ( a ) input voltage v in ( v ) 10 ? 2 10 ? 1 10 ? 1 1 10 10 2 11010 2 v o = 0.2 v t a = 25 c input voltage v in ( v ) output current i o ( ma ) 0 012 210 48 6 40 120 80 160 t a = 25 c i b = 1.0 ma 0.1 ma 0.2 ma 0.3 ma 0.4 ma 0.5 ma 0.6 ma 0.7 ma 0.8 ma 0.9 ma collector-emitter voltage v ce ( v ) collector current i c ( ma ) 10 ? 2 10 ? 1 10 ? 1 1 10 10 2 11010 2 i c / i b = 10 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 0 1 100 200 300 400 10 10 2 10 3 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( ma )
8 unr921xj series transistors with built-in resistor sjh00039bed c ob ? v cb i o ? v in v in ? i o c ob ? v cb i o ? v in v in ? i o characteristics charts of unr9217j i c ? v ce v ce(sat) ? i c h fe ? i c 0 10 ? 1 6 5 4 3 2 1 11010 2 f = 1 mhz i e = 0 t a = 25 c collector output capacitance (common base, input open circuited) c ob ( pf ) collector-base voltage v cb ( v ) 1 0.4 10 10 2 10 3 10 4 1.4 1.2 1.0 0.8 0.6 v o = 5 v t a = 25 c output current i o ( a ) input voltage v in ( v ) 10 ? 2 10 ? 1 10 ? 1 1 10 10 2 11010 2 v o = 0.2 v t a = 25 c input voltage v in ( v ) output current i o ( ma ) 012 210 48 6 0 120 100 80 60 40 20 t a = 25 c i b = 1 .0 ma 0.1 ma 0.2 ma 0.3 ma 0.4 ma 0.5 ma 0.6 ma 0.7 ma 0.8 ma 0.9 ma collector-emitter voltage v ce ( v ) collector current i c ( ma ) 10 ? 2 10 ? 1 10 ? 1 1 10 10 2 11010 2 i c / i b = 10 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 0 1 100 200 300 400 10 10 2 10 3 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( ma ) 0 10 ? 1 6 5 4 3 2 1 11010 2 f = 1 mhz i e = 0 t a = 25 c collector output capacitance (common base, input open circuited) c ob ( pf ) collector-base voltage v cb ( v ) 1 0.4 10 10 2 10 3 10 4 1.4 1.2 1.0 0.8 0.6 v o = 5 v t a = 25 c output current i o ( a ) input voltage v in ( v ) 10 ? 2 10 ? ? 1 10 ? 1 1 10 10 2 11010 2 v o = 0.2 v t a = 25 c input voltage v in ( v ) output current i o ( ma )
9 transistors with built-in resistor unr921xj series sjh00039bed characteristics charts of unr9218j i c ? v ce v ce(sat) ? i c h fe ? i c characteristics charts of unr9219j i c ? v ce v ce(sat) ? i c h fe ? i c c ob ? v cb i o ? v in v in ? i o 0 240 200 160 120 80 40 012 210 48 6 i b = 1.0 ma t a = 25 c 0.4 ma 0.3 ma 0.2 ma 0.1 ma 0.5 ma 0.6 ma 0.8 ma 0.7 ma 0.9 ma collector-emitter voltage v ce ( v ) collector current i c ( ma ) 10 ? 2 10 ? 1 1 10 10 2 10 ? 1 11010 2 i c / i b = 10 25 c ? 25 c t a = 75 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 0 40 80 120 160 11010 2 10 3 v ce = 10 v ? 25 c t a = 75 c 25 c forward current transfer ratio h fe collector current i c ( ma ) 0 6 5 4 3 2 1 10 ? 1 11010 2 f = 1 mhz i e = 0 t a = 25 c collector output capacitance (common base, input open circuited) c ob ( pf ) collector-base voltage v cb ( v ) 0.4 1.4 1.2 1.0 0.8 0.6 v o = 5 v t a = 25 c 1 10 10 2 10 3 10 4 output current i o ( a ) input voltage v in ( v ) 10 ? 2 10 ? 1 1 10 10 2 10 ? 1 11010 2 v o = 0.2 v t a = 25 c input voltage v in ( v ) output current i o ( ma ) 0 240 200 160 120 80 40 012 210 48 6 t a = 25 c 0.4 ma 0.3 ma 0.2 ma 0.1 ma 0.5 ma i b = 1.0 ma 0.6 ma 0.8 ma 0.7 ma 0.9 ma collector-emitter voltage v ce ( v ) collector current i c ( ma ) 10 ? 2 10 ? 1 1 10 10 2 10 ? 1 11010 2 i c / i b = 10 25 c ? 25 c t a = 75 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 0 40 80 120 160 11010 2 10 3 v ce = 10 v ? 25 c t a = 75 c 25 c forward current transfer ratio h fe collector current i c ( ma )
10 unr921xj series transistors with built-in resistor sjh00039bed c ob ? v cb i o ? v in v in ? i o c ob ? v cb i o ? v in v in ? i o characteristics charts of unr921aj i c ? v ce v ce(sat) ? i c h fe ? i c 0 6 5 4 3 2 1 10 ? 1 11010 2 f = 1 mhz i e = 0 t a = 25 c collector output capacitance (common base, input open circuited) c ob ( pf ) collector-base voltage v cb ( v ) 0.4 1.4 1.2 1.0 0.8 0.6 v o = 5 v t a = 25 c 1 10 10 2 10 3 10 4 output current i o ( a ) input voltage v in ( v ) 10 ? 2 10 ? 1 1 10 10 2 10 ? 1 11010 2 v o = 0.2 v t a = 25 c input voltage v in ( v ) output current i o ( ma ) t a = 25 c 0 120 80 40 0246810 i b = 0.5 ma 0.3 ma 0.2 ma 0.1 ma 0.4 ma collector-emitter voltage v ce ( v ) collector current i c ( ma ) 10 ? 1 10 ? 2 1 10 ? 1 11010 2 i c / i b = 10 ? 25 c t a = 75 c 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 10 ? 1 11010 2 10 3 v ce = 10 v 0 100 200 300 400 25 c ? 25 c t a = 75 c forward current transfer ratio h fe collector current i c ( ma ) 01020 1 10 f = 1 mhz t a = 25 c collector output capacitance (common base, input open circuited) c ob ( pf ) collector-base voltage v cb ( v ) 10 ? 2 10 ? 1 1 10 0123 v o = 5 v t a = 25 c output current i o ( ma ) input voltage v in ( v ) 1 10 10 2 11010 2 v o = 0.2 v t a = 25 c input voltage v in ( v ) output current i o ( ma )
11 transistors with built-in resistor unr921xj series sjh00039bed characteristics charts of unr921bj i c ? v ce v ce(sat) ? i c h fe ? i c characteristics charts of unr921cj i c ? v ce v ce(sat) ? i c h fe ? i c c ob ? v cb i o ? v in v in ? i o t a = 25 c 0 120 20 40 60 80 100 0246810 i b = 0.5 ma 0.3 ma 0.2 ma 0.1 ma 0.4 ma collector-emitter voltage v ce ( v ) collector current i c ( ma ) 10 ? 2 10 ? 1 10 1 10 ? 1 11010 2 i c / i b = 10 ? 25 c t a = 75 c 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) v ce = 10 v 0 100 200 300 400 11010 2 10 3 25 c ? 25 c t a = 75 c forward current transfer ratio h fe collector current i c ( ma ) 0 1 10 10 20 30 40 f = 1 mhz t a = 25 c collector output capacitance (common base, input open circuited) c ob ( pf ) collector-base voltage v cb ( v ) 0.4 0.8 1.2 1.6 v o = 5 v t a = 25 c 10 1 10 ? 1 output current i o ( ma ) input voltage v in ( v ) 10 ? 1 10 2 10 ? 1 11010 2 v o = 0.2 v t a = 25 c 1 10 input voltage v in ( v ) output current i o ( ma ) t a = 25 c 0 120 80 40 0246810 i b = 1.0 ma 0.3 ma 0.2 ma 0.1 ma 0.4 ma 0.5 ma 0.6 ma 0.7 ma 0.8 ma 0.9 ma collector-emitter voltage v ce ( v ) collector current i c ( ma ) 10 ? 1 10 ? 2 1 11010 2 i c / i b = 10 ? 25 c t a = 75 c 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 1 0 100 200 300 10 10 2 10 3 v ce = 10 v 25 c ? 25 c t a = 75 c forward current transfer ratio h fe collector current i c ( ma )
12 unr921xj series transistors with built-in resistor sjh00039bed c ob ? v cb i o ? v in v in ? i o c ob ? v cb i o ? v in v in ? i o characteristics charts of unr921dj i c ? v ce v ce(sat) ? i c h fe ? i c 0 10203040 f = 1 mhz t a = 25 c 1 10 10 2 collector output capacitance (common base, input open circuited) c ob ( pf ) collector-base voltage v cb ( v ) 10 ? 1 10 2 0 0.4 0.8 v o = 5 v t a = 25 c 1 10 output current i o ( ma ) input voltage v in ( v ) 10 ? 1 1 10 11010 2 v o = 0.2 v t a = 25 c input voltage v in ( v ) output current i o ( ma ) t a = 25 c i b = 1.0 ma 012 210 48 6 0 30 25 20 15 10 5 0.1 ma 0.2 ma 0.3 ma 0.4 ma 0.5 ma 0.6 ma 0.7 ma 0.8 ma 0.9 ma collector-emitter voltage v ce ( v ) collector current i c ( ma ) 10 ? 2 10 ? 1 1 10 10 2 10 ? 1 11010 2 i c / i b = 10 25 c ? 25 c t a = 75 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 0 40 80 120 160 11010 2 10 3 v ce = 10 v 25 c ? 25 c t a = 75 c forward current transfer ratio h fe collector current i c ( ma ) 0 6 5 4 3 2 1 10 ? 1 11010 2 f = 1 mhz i e = 0 t a = 25 c collector output capacitance (common base, input open circuited) c ob ( pf ) collector-base voltage v cb ( v ) 3.5 3.0 1.5 2.0 2.5 4.0 v o = 5 v t a = 25 c 1 10 10 2 10 3 10 4 output current i o ( a ) input voltage v in ( v ) 10 ? 2 10 ? 1 1 10 10 2 10 ? 1 11010 2 v o = 0.2 v t a = 25 c input voltage v in ( v ) output current i o ( ma )
13 transistors with built-in resistor unr921xj series sjh00039bed characteristics charts of unr921ej i c ? v ce v ce(sat) ? i c h fe ? i c characteristics charts of unr921fj i c ? v ce v ce(sat) ? i c h fe ? i c c ob ? v cb i o ? v in v in ? i o 012 210 48 6 0 60 50 40 30 20 10 t a = 25 c i b = 1.0 ma 0.1 ma 0.2 ma 0.3 ma 0.4 ma 0.5 ma 0.6 ma 0.7 ma 0.8 ma 0.9 ma collector-emitter voltage v ce ( v ) collector current i c ( ma ) 10 ? 2 10 ? 1 10 ? 1 1 10 10 2 11010 2 i c / i b = 10 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 0 1 40 80 120 160 10 10 2 10 3 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( ma ) 0 10 ? 1 6 5 4 3 2 1 11010 2 f = 1mhz i e = 0 t a = 25 c collector output capacitance (common base, input open circuited) c ob ( pf ) collector-base voltage v cb ( v ) 10 ? 2 10 ? 1 10 ? 1 1 10 10 2 11010 2 v o = 0.2 v t a = 25 c input voltage v in ( v ) output current i o ( ma ) 1 1.5 10 10 2 10 3 10 4 4.0 3.5 3.0 2.5 2.0 v o = 5 v t a = 25 c output current i o ( a ) input voltage v in ( v ) 012 210 48 6 0 240 200 160 120 80 40 t a = 25 c i b = 1.0 ma 0.1 ma 0.2 ma 0.3 ma 0.4 ma 0.5 ma 0.6 ma 0.7 ma 0.8 ma 0.9 ma collector-emitter voltage v ce ( v ) collector current i c ( ma ) 10 ? 2 10 ? 1 10 ? 1 1 10 10 2 11010 2 i c / i b = 10 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 0 1 40 80 120 160 10 10 2 10 3 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( ma )
14 unr921xj series transistors with built-in resistor sjh00039bed c ob ? v cb i o ? v in v in ? i o c ob ? v cb v in ? i o characteristics charts of unr921kj i c ? v ce v ce(sat) ? i c h fe ? i c 0 10 ? 1 6 5 4 3 2 1 11010 2 f = 1 mhz i e = 0 t a = 25 c collector output capacitance (common base, input open circuited) c ob ( pf ) collector-base voltage v cb ( v ) 1 0.4 10 10 2 10 3 10 4 1.4 1.2 1.0 0.8 0.6 v o = 5 v t a = 25 c output current i o ( a ) input voltage v in ( v ) 10 ? 2 10 ? 1 10 ? 1 1 10 10 2 11010 2 v o = 0.2 v t a = 25 c input voltage v in ( v ) output current i o ( ma ) 012 210 48 6 0 240 200 160 120 80 40 i b = 1.2 ma 0.2 ma 0.4 ma 0.6 ma 0.8 ma 1.0 ma t a = 25 c collector-emitter voltage v ce ( v ) collector current i c ( ma ) 10 ? 2 10 ? 1 1 10 10 2 11010 2 10 3 i c / i b = 10 ? 25 c t a = 75 c 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 0 240 200 160 120 80 40 11010 2 10 3 v ce = 10 v 25 c ? 25 c t a = 75 c forward current transfer ratio h fe collector current i c ( ma ) 11010 2 0 6 5 4 3 2 1 f = 1 mhz i e = 0 t a = 25 c collector output capacitance (common base, input open circuited) c ob ( pf ) collector-base voltage v cb ( v ) 10 ? 2 10 ? 1 1 10 10 2 10 ? 1 11010 2 v o = 0.2 v t a = 25 c input voltage v in ( v ) output current i o ( ma )
15 transistors with built-in resistor unr921xj series sjh00039bed characteristics charts of unr921lj i c ? v ce v ce(sat) ? i c h fe ? i c characteristics charts of unr921mj i c ? v ce v ce(sat) ? i c h fe ? i c c ob ? v cb v in ? i o 012 210 48 6 0 240 200 160 120 80 40 i b = 1.0 ma 0.2 ma 0.4 ma 0.6 ma 0.8 ma t a = 25 c collector-emitter voltage v ce ( v ) collector current i c ( ma ) 10 ? 2 10 ? 1 1 10 10 2 i c / i b = 10 ? 25 c t a = 75 c 25 c 11010 2 10 3 collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 0 240 200 160 120 80 40 11010 2 10 3 v ce = 10 v 25 c ? 25 c t a = 75 c forward current transfer ratio h fe collector current i c ( ma ) 11010 2 0 6 5 4 3 2 1 f = 1 mhz i e = 0 t a = 25 c collector output capacitance (common base, input open circuited) c ob ( pf ) collector-base voltage v cb ( v ) 10 ? 2 10 ? 1 1 10 10 2 10 ? 1 11010 2 v o = 0.2 v t a = 25 c input voltage v in ( v ) output current i o ( ma ) 0 012 210 48 6 240 200 160 120 80 40 t a = 25 c i b = 1.0 ma 0.2 ma 0.1 ma 0.3 ma 0.4 ma 0.5 ma 0.6 ma 0.7 ma 0.8 ma 0.9 ma collector-emitter voltage v ce ( v ) collector current i c ( ma ) 10 ? 3 1 10 ? 2 10 ? 1 1 10 10 10 2 10 3 i c / i b = 10 t a = 75 c 25 c ? 25?c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 0 1 100 200 300 500 400 10 10 2 10 3 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( ma )
16 unr921xj series transistors with built-in resistor sjh00039bed c ob ? v cb i o ? v in v in ? i o c ob ? v cb i o ? v in v in ? i o characteristics charts of unr921nj i c ? v ce v ce(sat) ? i c h fe ? i c 0 10 ? 1 5 4 3 2 1 11010 2 f = 1 mhz i e = 0 t a = 25 c collector output capacitance (common base, input open circuited) c ob ( pf ) collector-base voltage v cb ( v ) 1 0.4 10 10 2 10 3 10 4 1.4 1.2 1.0 0.8 0.6 v o = 5 v t a = 25 c output current i o ( a ) input voltage v in ( v ) 10 ? 2 10 ? 1 10 ? 1 1 10 10 2 11010 2 v o = 0.2 v t a = 25 c input voltage v in ( v ) output current i o ( ma ) 012 210 48 6 0 40 120 80 160 i b = 1.0 ma 0.2 ma 0.4 ma 0.8 ma 0.7 ma 0.6 ma t a = 25 c 0.9 ma 0.5 ma 0.3 ma 0.1 ma collector-emitter voltage v ce ( v ) collector current i c ( ma ) 10 ? 2 10 ? 1 1 10 11010 2 10 3 i c / i b = 10 25 c ? 25 c t a = 75 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 0 480 400 320 240 160 80 11010 2 10 3 v ce = 10 v 25 c ? 25 c t a = 75 c forward current transfer ratio h fe collector current i c ( ma ) 11010 2 0 6 5 4 3 2 1 f = 1 mhz i e = 0 t a = 25 c collector output capacitance (common base, input open circuited) c ob ( pf ) collector-base voltage v cb ( v ) 1 10 10 2 10 3 10 4 1.2 1.0 0.4 0.6 0.8 1.4 v o = 5 v t a = 25 c output current i o ( a ) input voltage v in ( v ) 10 ? 2 10 ? 1 1 10 10 2 10 ? 1 11010 2 v o = 0.2 v t a = 25 c input voltage v in ( v ) output current i o ( ma )
17 transistors with built-in resistor unr921xj series sjh00039bed characteristics charts of unr921tj characteristics charts of unr921vj i c ? v ce v ce(sat) ? i c h fe ? i c c ob ? v cb i o ? v in v in ? i o i c ? v ce v ce(sat) ? i c h fe ? i c 0 02 10 48 6 40 120 80 160 collector-emitter voltage v ce ( v ) collector current i c ( ma ) 0.8 ma 0.7 ma 0.6 ma 0.4 ma 0.3 ma 0.2 ma 0.1 ma i b = 1.0 ma 0.9 ma t a = 25 c 0.5 ma 10 10 2 10 1 10 2 10 3 25 c ? 25 c t a = 75 c i c / i b = 10 collector-emitter saturation voltage v ce(sat) ( mv ) collector current i c ( ma ) 0 10 ? 1 100 400 300 200 11010 2 25 c ? 25 c t a = 75 c v ce = 10 v forward current transfer ratio h fe collector current i c ( ma ) 0 1 4 3 2 1 10 10 2 collector output capacitance (common base, input open circuited) c ob ( pf ) collector-base voltage v cb ( v ) 10 ? 3 10 ? 1 10 ? 2 0.25 1 10 10 2 0.75 1.25 v o = 5 v t a = 25 c output current i o ( ma ) input voltage v in ( v ) 10 ? 1 1 10 10 2 10 ? 3 10 ? 2 10 ? 1 110 2 10 v o = 0.2 v t a = 25 c input voltage v in ( v ) output current i o ( ma ) 012 210 48 6 0 40 120 80 160 i b = 1.0 ma 0.2 ma 0.4 ma 0.5 ma 0.6 ma 0.7 ma 0.8 ma t a = 25 c 0.9 ma 0.3 ma collector-emitter voltage v ce ( v ) collector current i c ( ma ) 10 ? 2 10 ? 1 1 10 11010 2 10 3 i c / i b = 10 25 c ? 25 c t a = 75 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 0 240 200 160 120 80 40 11010 2 10 3 v ce = 10 v ? 25 c t a = 75 c 25 c forward current transfer ratio h fe collector current i c ( ma )
18 unr921xj series transistors with built-in resistor sjh00039bed c ob ? v cb i o ? v in v in ? i o 11010 2 0 6 5 4 3 2 1 f = 1 mhz i e = 0 t a = 25 c collector output capacitance (common base, input open circuited) c ob ( pf ) collector-base voltage v cb ( v ) 1 10 10 2 10 3 10 4 1.2 1.0 0.4 0.6 0.8 1.4 v o = 5 v t a = 25 c output current i o ( a ) input voltage v in ( v ) 10 ? 2 10 ? 1 1 10 10 2 10 ? 1 11010 2 v o = 0.2 v t a = 25 c input voltage v in ( v ) output current i o ( ma )
request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese government if any of the products or technical information described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. it neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) we are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) the products described in this material are intended to be used for standard applications or general elec- tronic equipment (such as office equipment, communications equipment, measuring instruments and house- hold appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus- tion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (5) the products and product specifications described in this material are subject to change without notice for modification and/or improvement. at the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifica- tions satisfy your requirements. (6) when designing your equipment, comply with the guaranteed values, in particular those of maximum rat- ing, the range of operating power supply voltage, and heat radiation characteristics. otherwise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) when using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) this material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of matsushita electric industrial co., ltd. 2003 sep


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